Title :
The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT
Author :
Mohamad, Mazuina ; Mustafa, Farahiyah ; Abidin, Mastura Shafinaz Zainal ; Rahman, S.F.A. ; Al-Obaidi, Nihad K Ali ; Hashim, Abdul Manaf ; Aziz, Aznita Abdul ; Hashim, Mohammed Roslan
Author_Institution :
Mater. Innovations & Nanoelectron. Res. Group, Univ. Teknol. Malaysia, Skudai, Malaysia
Abstract :
The response of Pt-circular Schottky diodes fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure to hydrogen gas at various temperatures, ranging from 25°C to 200°C has been investigated. A 5 nm-thick of catalytic Pt Shottky contact is formed by electron beam evaporation. Both forward and reverse currents of the device increase upon exposing to hydrogen gas. Although a slight change of forward and reverse current is obtained at room temperature upon exposure to hydrogen but both currents drastically increase with the increase of temperatures. The time-transient characteristics show the average current increment and decrement speed of 27.6 nA/sec and 17.6 nA/sec, respectively at constant forward bias of 1V and temperature of 200°C.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; gas sensors; high electron mobility transistors; hydrogen; vacuum deposition; AlGaN-GaN; HEMT; Pt; Schottky diodes; Shottky contact; electron beam evaporation; high electron mobility transistor structure; hydrogen gas sensor; size 5 nm; temperature 25 C to 200 C; temperature 293 K to 298 K; thick of catalytic; time transient characteristics; Aluminum gallium nitride; Chemical sensors; Gallium nitride; Gas detectors; HEMTs; Hydrogen; Schottky diodes; Semiconductor materials; Temperature sensors; Wireless sensor networks;
Conference_Titel :
Semiconductor Electronics (ICSE), 2010 IEEE International Conference on
Conference_Location :
Melaka
Print_ISBN :
978-1-4244-6608-5
DOI :
10.1109/SMELEC.2010.5549369
