GaAs HBT class-E amplifiers for 2-GHz mobile applications

Author

Järvinen, Esko A. ; Alanen, Marko J.

Author_Institution

Nokia Technol. Platforms, Helsinki, Finland

fYear

2005

Firstpage

421

Lastpage

424

Abstract

This paper discusses practical design aspects of integrated class-E power amplifiers. The described design concepts were applied to the realization of a two-stage GaAs HBT amplifier targeted for WCDMA operation. The fabricated MMIC was packaged in a 12-lead 3×3 mm² micro lead frame package. The package was mounted onto an FR4 test board containing components needed for matching and bias networks. At the design frequency of 1.95 GHz, the power amplifier delivered an output power of 27.0 dBm with collector and power-added efficiencies (PAE) of 74.5% and 62.5%, respectively. The PAE remains over 60% in the frequency range of 1.7-2.0 GHz.

Keywords

MMIC power amplifiers; UHF power amplifiers; bipolar analogue integrated circuits; mobile radio; 1.7 to 2.0 GHz; 1.95 GHz; 3 mm; 60 percent; 62.5 percent; 74.5 percent; GaAs; HBT class-E amplifiers; MMIC; PAE; WCDMA; bias networks; integrated class-E power amplifiers; matching networks; micro lead frame package; mobile radio; two-stage amplifier; Frequency; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Multiaccess communication; Operational amplifiers; Packaging; Power amplifiers; Power generation; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8983-2

Type

conf

DOI

10.1109/RFIC.2005.1489831

Filename

1489831