Title :
A small distortion two-dimensional position-sensitive detector (PSD) with on-chip MOSFET switches
Author :
Morikawa, Y. ; Kawamura, K.
Author_Institution :
Nippon Steel Corp., Kawasaki, Japan
Abstract :
The authors describe a two-dimensional position-sensitive detector (PSD) device. The device has a structure analogous to a tetralateral 2D-PSD but has on-chip MOSFET switches at the edges of the sensing area which make the detection principle equivalent to that of a 1D-PSD. This results in a linearity of position sensing in the 2D-PSD as good as that in the 1D-PSD. The integrated MOSFET´s performance and position-detection characteristics were experimentally investigated. The position nonlinearity of the output signal was found to be drastically reduced from 7% in the conventional operation to 0.02% in the MOSFET switching operation. The maximum operating frequency of the MOSFETs was about 5 kHz for this prototype device. The device is expected to be useful for precise two-dimensional light beam detection over a large sensing area.<>
Keywords :
electric sensing devices; insulated gate field effect transistors; position measurement; semiconductor switches; 5 kHz; linearity; on-chip MOSFET switches; position nonlinearity; prototype; two-dimensional light beam detection; two-dimensional position-sensitive detector; Electrodes; Fabrication; Linearity; MOSFET circuits; P-n junctions; Photoconductivity; Position sensitive particle detectors; Prototypes; Surface resistance; Switches;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.148984
