Title :
An ultra-low distortion 3P2T antenna switch MMIC for dual-band W-CDMA applications
Author :
Asuda, Eiji Y. ; Hidaka, Kenichi ; Nakatsuka, Tadayoshi ; Watanabe, Atsushi ; Tara, Katsushi
Author_Institution :
RF-Semicond. Dev. Center, Matsushita Electr. Ind. Co., Ltd, Kyoto, Japan
Abstract :
We propose an ultra-low distortion 3P2T antenna switch MMIC for dual-band W-CDMA systems. The switch MMIC consists of a GaAs MMIC with 0.4 μm-gate p-HEMT and Si CMOS IC with a decoder and charge pump circuit. Ultra-low distortion and low insertion loss were achieved by controlling 2-stacked FETs with a voltage of 7 V up-converted from a supply voltage of 2.4 V. The switch MMIC provides IMD2 and IMD3 levels less than -110 dBm, which well satisfies the out-of-band blocking specification for W-CDMA systems. The MMIC shows insertion loss of 0.27 dB for 800 MHz and 0.38 dB for 2 GHz bands.
Keywords :
3G mobile communication; CMOS integrated circuits; DC-DC power convertors; HEMT integrated circuits; MMIC; antenna accessories; code division multiple access; distortion; field effect transistor switches; gallium arsenide; integrated circuit design; microwave switches; silicon; 0.27 dB; 0.38 dB; 0.4 micron; 2 GHz; 2.4 V; 3P2T antenna switch MMIC; 7 V; 800 MHz; FET; HEMT; MMIC switch; W-CDMA systems; charge pump circuit; circuit design; decoder; dual-band W-CDMA; gallium arsenide MMIC; insertion loss; out-of-band blocking specification; silicon CMOS IC; supply voltage; third-generation mobile communication; ultra-low distortion; up-converted voltage; CMOS integrated circuits; Charge pumps; Decoding; Dual band; Gallium arsenide; Insertion loss; MMICs; Multiaccess communication; Switches; Switching circuits;
Conference_Titel :
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Print_ISBN :
0-7803-8983-2
DOI :
10.1109/RFIC.2005.1489841
