Title :
A gallium nitride FET based DC-DC converter for the new 48 V automotive system
Author :
Roschatt, P.M. ; McMahon, Richard A. ; Pickering, S.
Author_Institution :
Univ. of Cambridge, Cambridge, UK
Abstract :
This paper presents the design and evaluation of a gallium nitride hard switched non isolated DC-DC converter for the future 48 V automotive power system. The use of new wide band gap devices would allow an increase of the switching frequency to the MHz region allowing the design of a smaller, lighter and more energy dense converter. The work presents a single phase leg converter with peak efficiencies greater than 90% and an output power of 198 W.
Keywords :
DC-DC power convertors; III-V semiconductors; automotive electrics; gallium compounds; power field effect transistors; switching convertors; wide band gap semiconductors; GaN; automotive power system; gallium nitride FET; gallium nitride hard switched nonisolated DC-DC converter; power 198 W; single phase leg converter; switching frequency; voltage 48 V; wideband gap device; 48 V; DC-DC; GaN; automotive; converter;
Conference_Titel :
Power Electronics, Machines and Drives (PEMD 2014), 7th IET International Conference on
Conference_Location :
Manchester
Electronic_ISBN :
978-1-84919-815-8
DOI :
10.1049/cp.2014.0507
