Title :
Silicon nitride passivation of double channel InP HEMTs using inductively coupled plasma-enhanced chemical vapor deposition
Author :
Medjdoub, M. ; Maher, H. ; Ladner, C. ; Courant, J.L. ; Post, G.
Author_Institution :
OPTO, CNET, Route de Nozay Marcoussis, France
fDate :
6/21/1905 12:00:00 AM
Abstract :
Double channel (DC) InGaAs-InP HEMTs with different gate lengths, ranging from 0.1 to 0.7 μm, have been encapsulated with SiNx film using an RF-Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICP-PECVD) equipment. SiNx passivation films are deposited at room temperature and characterised by a resistivity and a breakdown voltage of 1013 Ω.cm and 12-13 MV cm-1 respectively. DC characteristics are investigated before and after passivation. Preliminary electrical stress experiments (45 hours at Vds=2 V and Vgs=-1.2 V) have been conducted on passivated HEMTs. The passivation induces a slight decrease of Idss and Gm; however a large reduction of gate leakage current is observed and the on-state breakdown voltage increases from 4.5 to 6 V before and after passivation respectively. Moreover Idss seems to stabilise after 40 hours of electrical stress
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; millimetre wave field effect transistors; millimetre wave power transistors; passivation; plasma CVD coatings; power HEMT; semiconductor device breakdown; 0.1 to 0.7 micron; 6 V; DC characteristics; EHF; ICP-PECVD equipment; InGaAs-InP; InGaAs-InP HEMTs; MM-wave power applications; SiNx passivation films; breakdown voltage; chemical vapor deposition; double channel InP HEMTs; electrical stress experiments; gate leakage current; inductively coupled PECVD; passivated HEMTs; plasma-enhanced CVD; resistivity; room temperature deposition; Decision support systems; HEMTs; Indium phosphide; MODFETs; Passivation; Plasma chemistry; Plasma properties; Plasma temperature; Silicon compounds; Stress;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-5298-X
DOI :
10.1109/EDMO.1999.821456
