Title :
Low-temperature grown GaAs and Al0.3Ga0.7As MISFETs-characterization and model development
Author :
Rao, Rapeta V V V J ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Liou, J.J.
Author_Institution :
Centre for Wireless Commun., Nat. Univ. of Singapore, Singapore
fDate :
6/21/1905 12:00:00 AM
Abstract :
GaAs and Al0.3Ga0.7As, grown at 280°C by molecular beam epitaxy (MBE) and in situ annealed at 600°C for 10 minutes, have been employed as gate insulators in GaAs based field effect transistors and their properties analyzed. Low frequency noise studies on TLM structures of MISFETs were carried out to evaluate the performance of MISFETs. Insulator thickness dependency on the performance of MISFETs was observed. Noise performance was improved as the thickness of the insulator was reduced. Off-state breakdown characteristics of MISFET devices indicated a little change in the gate-drain breakdown characteristics of MISFETs. An analytical model has been developed to predict the DC and RF performance of the MISFET devices
Keywords :
III-V semiconductors; MISFET; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor device breakdown; semiconductor device models; semiconductor device noise; 10 min; 280 C; 600 C; Al0.3Ga0.7As; AlGaAs MISFET; DC performance prediction; GaAs; GaAs MISFET; MBE growth; RF performance prediction; TLM structures; analytical model; characterization; field effect transistor; gate insulators; gate-drain breakdown characteristics; in situ annealing; insulator thickness dependency; low frequency noise; low-temperature growth; model development; molecular beam epitaxy; noise performance; offstate breakdown characteristics; Analytical models; Annealing; Electric breakdown; FETs; Gallium arsenide; Insulation; Low-frequency noise; MISFETs; Molecular beam epitaxial growth; Noise reduction;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-5298-X
DOI :
10.1109/EDMO.1999.821458
