Title :
Temperature effect on the performance of a traveling wave amplifier in 130 nm SOI technology
Author :
Moussa, M. Si ; Pavageau, C. ; Danneville, F. ; Russat, J. ; Fel, N. ; Raskin, J.-P. ; Vanhoenacker-Janvier, D.
Author_Institution :
Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
The behavior of an integrated traveling wave amplifier (TWA), fabricated in a 130 nm silicon-on-insulator (SOI) CMOS process, has been characterized over a temperature range from 25°C to 250°C. The TWA is a four-stage cascode design which uses floating body (FB) transistors and microstrip lines as passives. A gain of 7 dB with a 0.4-27 GHz bandwidth is measured under 1.4 V supply voltage. The effects of high temperature are observed on the gain of the TWA, as well as on the SOI transistors and the microstrip lines.
Keywords :
MMIC amplifiers; MOS integrated circuits; distributed amplifiers; microstrip lines; silicon-on-insulator; travelling wave amplifiers; wideband amplifiers; 0.4 to 27 GHz; 1.4 V; 130 nm; 25 to 250 degC; 7 dB; CMOS process; MMIC; SOI MOSFET transistor; TWA high temperature gain effects; broadband amplifiers; distributed amplifiers; floating body transistors; integrated TWA; microstrip lines; multistage cascode configuration; traveling wave amplifier; CMOS process; Circuits; Consumer electronics; Control systems; Distributed amplifiers; MOSFETs; Microstrip; Optical amplifiers; Silicon on insulator technology; Temperature;
Conference_Titel :
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Print_ISBN :
0-7803-8983-2
DOI :
10.1109/RFIC.2005.1489854
