Title :
Fabrication and characterisation of Al0.23Ga0.77 N/GaN HFETs on MOVPE layers
Author :
Hughes, B.T. ; Parmiter, P.J. ; Birbeck, J.C. ; Hydes, A.J. ; Lee, D. ; Uren, M.J. ; Martin, T. ; Wallis, R.H.
Author_Institution :
DERA, Great Malvern, UK
fDate :
6/21/1905 12:00:00 AM
Abstract :
MOVPE has been used to grow 2D electron gas layers with concentration 8×1012 cm-2 and mobility 10 30 cm2/Vsec in a AlGaN/GaN heterostructure. Mesa isolated HFET devices have been fabricated using this material which show excellent isolation and highly encouraging characteristics suitable for power microwave applications
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor epitaxial layers; vapour phase epitaxial growth; wide band gap semiconductors; 2D electron gas layers; 2DEG layers; Al0.23Ga0.77N-GaN; AlGaN-GaN HFET; AlGaN/GaN heterostructure; MOVPE layers; characterisation; fabrication; mesa isolated HFET devices; power microwave applications; Aluminum gallium nitride; Conductivity; Epitaxial growth; Epitaxial layers; Etching; Fabrication; Gallium nitride; HEMTs; MODFETs; Silicon carbide;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-5298-X
DOI :
10.1109/EDMO.1999.821460
