TCAD evaluation of AlGaN/GaN device performance for high power applications

Author

Jones, S.K. ; Marsh, S.P. ; Phillips, W.A.

Author_Institution

Marconi Mater. Technol., Towcester, UK

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

65

Lastpage

70

Abstract

A simulation study of AlGaN/GaN heterojunction FET (HFET) device design is presented. 2D physical device modelling, within a TCAD framework, is used to predict device DC and small-signal RF performance. These TCAD predictions are input to a microwave circuit design and simulation tool to assess the performance of GaN-based devices for an X-band amplifier application. The sensitivity of the device and amplifier to self-heating and ohmic contact resistance is discussed

Keywords

III-V semiconductors; aluminium compounds; contact resistance; digital simulation; gallium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device models; technology CAD (electronics); wide band gap semiconductors; 2D physical device modelling; AlGaN-GaN; AlGaN/GaN device performance; DC performance prediction; GaN-based devices; HFET device design; TCAD evaluation; TCAD framework; X-band amplifier application; heterojunction FET; high power applications; microwave circuit design/simulation tool; ohmic contact resistance sensitivity; self-heating sensitivity; small-signal RF performance prediction; Aluminum gallium nitride; Circuit simulation; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Microwave FETs; Predictive models; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on

Conference_Location

London

Print_ISBN

0-7803-5298-X

Type

conf

DOI

10.1109/EDMO.1999.821461

Filename

821461