High power microwave SiC MESFET technology

Author

Hilton, K.P. ; Uren, M.J. ; Hayes, D.G. ; Wilding, P.J. ; Johnson, H.K. ; Guest, J.J. ; Smith, B.H.

Author_Institution

DERA, Great Malvern, UK

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

71

Lastpage

74

Abstract

A silicon carbide MESFET technology has been established. Single finger and multifinger power devices have been fabricated. Ft and Fmax of 6 and 18 GHz respectively were obtained from single finger devices. Current instabilities have been observed under CW operation, although microwave power densities of 2.5 W/mm have been achieved under pulsed operation at 2-4 GHz. A maximum power of 6.8 W has been achieved from a single device, and over 16 W from a single chip with three devices bonded together, these devices were measured pulsed at 4 GHz

Keywords

microwave field effect transistors; microwave power transistors; power MESFET; silicon compounds; stability; wide band gap semiconductors; 16 W; 2 to 18 GHz; 6.8 W; CW operation; SiC; SiC MESFET technology; current instabilities; high power microwave MESFET technology; microwave power densities; multifinger power devices; pulsed operation; single power devices; Current measurement; Etching; Fingers; Gallium nitride; MESFETs; Microwave devices; Microwave technology; Pulse measurements; Silicon carbide; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on

Conference_Location

London

Print_ISBN

0-7803-5298-X

Type

conf

DOI

10.1109/EDMO.1999.821462

Filename

821462