Title :
High-field phenomena and reliability issues in microwave heterojunction FETs
Author :
Menozzi, Roberto
Author_Institution :
Dipt. di Ingegneria dell´´Inf., Parma Univ., Italy
fDate :
6/21/1905 12:00:00 AM
Abstract :
This work overviews different issues connected with high electric field conditions in power microwave AlGaAs-GaAs heterojunction FETs (HFETs). These conditions and possible attendant degradation mechanisms, are likely to take place when devices are operated at high drain voltage for power amplification. Typical degradation modes described in this paper include drain current and transconductance reduction (and power slump). A physical interpretation of the experimental results is given with the support of numerical device simulations. The non-trivial relationship between the drain-gate HFET breakdown voltage and the device reliability is also discussed in some detail
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high field effects; hot carriers; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device breakdown; semiconductor device reliability; AlGaAs-GaAs; AlGaAs/GaAs HFET; degradation mechanisms; device reliability; drain current reduction; drain-gate HFET breakdown voltage; high drain voltage; high electric field conditions; high-field phenomena; hot electron degradation; microwave heterojunction FETs; numerical device simulations; power amplification; power microwave HFETs; power slump; transconductance reduction; Costs; Degradation; Doping; Heterojunctions; Impact ionization; Microwave FETs; Microwave devices; Power amplifiers; Production; Voltage;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-5298-X
DOI :
10.1109/EDMO.1999.821463
