Title :
Thermal simulations of III/V HEMTs
Author :
Quay, R. ; Reuter, R. ; Grasser, T. ; Selberherr, S.
Author_Institution :
Fraunhofer-Inst. of Appl. Solid-State Phys., Freiburg, Germany
fDate :
6/21/1905 12:00:00 AM
Abstract :
Thermal management is a key problem for semiconductor RF-components due to the reduction of chip and device performance by thermal effects. The simulation of devices at various operating temperatures and the inclusion of self-heating effects in the simulation are therefore crucial for the optimization of devices with respect to chip and system performance as well as for reliability concerns. We present investigations of GaAs based high electron mobility transistors (HEMTs) using the two-dimensional device simulator MINIMOS-NT. This includes the critical influence of the contact modeling and findings for realistic thermal boundary conditions. Temperature dependent DC transfer characteristics, RF-simulation results, and comparisons to measurements of state of the art HEMTs are given
Keywords :
III-V semiconductors; UHF field effect transistors; gallium arsenide; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device packaging; semiconductor device reliability; thermal management (packaging); GaAs; HEMTs; MINIMOS-NT; RF-simulation results; contact modeling; device performance; operating temperatures; reliability concerns; self-heating effects; semiconductor RF-components; temperature dependent DC transfer characteristics; thermal boundary conditions; thermal management; two-dimensional device simulator; Boundary conditions; Equations; Gallium arsenide; HEMTs; Lattices; MODFETs; Packaging; Solid state circuits; Temperature dependence; Thermal management;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-5298-X
DOI :
10.1109/EDMO.1999.821465
