DocumentCode
1589872
Title
Measurements and simulations of the turn-off behaviour of diodes with deep energy levels of Se implanted in Si
Author
Pertermann, Eric ; Lutz, Josef ; Arnold, Martin ; Zahn, Dietrich R. T. ; Schulze, H.-J. ; Felsl, Hans Peter ; Niedernostheide, F.-J.
Author_Institution
Power Electron. & EMC, Chemnitz Univ. of Technol., Chemnitz, Germany
fYear
2013
Firstpage
1
Lastpage
6
Abstract
The switching softness of high-voltage power diodes is significantly influenced by the design of the field-stop layer and its dopant atoms. The influence of the energy levels of selenium - used as donor in the field-stop layer - on the turn-off behaviour of CIBH diodes has been investigated by DLTS-measurements and device simulations.
Keywords
atomic structure; deep level transient spectroscopy; power semiconductor diodes; CIBH diodes; DLTS-measurements; deep energy levels; device simulations; diode turn-off behaviour; dopant atoms; field-stop layer; high-voltage power diodes; selenium energy levels; switching softness; Atomic measurements; Energy measurement; Energy states; Ionization; Semiconductor diodes; Silicon; Temperature measurement; Device simulation; Diode; Reverse recovery;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location
Lille
Type
conf
DOI
10.1109/EPE.2013.6634738
Filename
6634738
Link To Document