Title :
Ultra-high-power repetitive solid state DBD-based switching
Author :
Rukin, S.N. ; Alichkin, E.A. ; Lyubutin, S.K. ; Mesyats, G.A. ; Slovikovsky, B.G.
Author_Institution :
Ural Div., Russian Acad. of Sci., Ekaterinburg, Russia
Abstract :
A delayed breakdown device (DBD) presents a closing switch employing the process of fast filling of the semiconductor structure with plasma produced by an ionizing shock wave. The DBD-effect was discovered by I.V. Grekhov and A.F. Kardo-Sysoev in 1979. Today the most powerful DBDs containing several series-connected semiconductor structures form pulses with amplitude of about 10/sup 4/ V and a peak power of units of MW at a 50-/spl Omega/ load. We tried to extend the DBD-based switching process to output voltages equal to hundreds of kV and an output power of several hundreds of MW by connecting many large-square structures in series. The experiments showed that this approach permits increasing the peak power by more than two orders of magnitude (up to 1 GW) at the FWHM of about 2 ns.
Keywords :
power semiconductor switches; semiconductor device breakdown; 1 GW; 10/sup 4/ V; 2 ns; 50 ohm; closing switch; delayed breakdown device; electron-hole plasma; ionizing shock wave; pulse repetition rate; semiconductor structure; ultra-high-power repetitive solid-state switching; Electric breakdown; Filling; Plasma devices; Plasma waves; Power semiconductor switches; Propagation delay; Semiconductor device breakdown; Shock waves; Solid state circuits; Voltage;
Conference_Titel :
Pulsed Power Plasma Science, 2001. PPPS-2001. Digest of Technical Papers
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-7803-7120-8
DOI :
10.1109/PPPS.2001.1002059
