• DocumentCode
    1589965
  • Title

    Development of high power photoconductive semiconductor switches treated with amorphic diamond coatings

  • Author

    Davanloo, F. ; Iosif, M.C. ; Camase, D.T. ; Collins, C.B.

  • Author_Institution
    Center for Quantum Electron., Texas Univ., Richardson, TX, USA
  • Volume
    1
  • fYear
    2001
  • Firstpage
    337
  • Abstract
    The semiconductor properties of amorphic diamond can be employed to improve the photoconductive semiconductor switch (PCSS) longevity by coating the switch cathode or anode areas or both. For example if the switch cathode is coated, the tunneling of electrons from amorphic diamond to GaAs during the off-state stage of PCSS operation provides pre-avalanche sites that may diffuse conduction current upon switch activation. On the other hand, diamond coating of the switch anode area may result in increased hold-off characteristics and longer switch lifetimes by blocking leakage current. The critical issue to resolve is the switch design options that make optimal use of amorphic diamond coatings for long life operations of avalanche PCSS in pulsed power devices such as stacked Blumlein. This report presents progress toward improving switch operation and lifetime by advanced treatments with amorphic diamond coatings.
  • Keywords
    III-V semiconductors; diamond; gallium arsenide; photoconducting switches; power semiconductor switches; protective coatings; pulsed power switches; GaAs high power photoconductive semiconductor switch; GaAs-C; amorphic diamond coating; avalanche mode; conduction current; device lifetime; electron tunneling; hold-off characteristics; leakage current; pulsed power device; semiconductor properties; stacked Blumlein; Anodes; Bonding; Cathodes; Coatings; Electrons; Gallium arsenide; Laboratories; Optical pulses; Photoconducting devices; Power semiconductor switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Pulsed Power Plasma Science, 2001. PPPS-2001. Digest of Technical Papers
  • Conference_Location
    Las Vegas, NV, USA
  • Print_ISBN
    0-7803-7120-8
  • Type

    conf

  • DOI
    10.1109/PPPS.2001.1002061
  • Filename
    1002061