Investigation of optical-microwave frequency conversion processes for PIN photodiode

Author

Dawidczyk, Jaroslaw ; Galwas, Bogdan A. ; Malyshev, Sergei A.

Author_Institution

Warsaw Univ. of Technol., Poland

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

103

Lastpage

107

Abstract

Investigations of optical-microwave mixing process performed on a PIN photodetector are reported in the paper. The planar InGaAsP/InGaAs/InP heterostructure PIN photodiode operating at 1.3 μm has been used in an optoelectronic mixer configuration. The nonlinear model of the PIN photodiode has been assumed. The parameters of nonlinear equivalent circuit of the device have been extracted from the measured data. The influence of nonlinear responsivity has been considered. The short mathematical analysis, and measurement results are presented

Keywords

III-V semiconductors; equivalent circuits; gallium arsenide; indium compounds; microwave photonics; mixers (circuits); optical frequency conversion; optical receivers; p-i-n photodiodes; 1.3 micrometre; InGaAsP-InGaAs-InP; heterostructure PIN photodiode; nonlinear equivalent circuit; nonlinear model; nonlinear responsivity; optical-microwave frequency conversion processes; optoelectronic mixer configuration; Data mining; Equivalent circuits; Frequency conversion; Indium gallium arsenide; Indium phosphide; Mixers; Nonlinear optics; Optical mixing; PIN photodiodes; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on

Conference_Location

London

Print_ISBN

0-7803-5298-X

Type

conf

DOI

10.1109/EDMO.1999.821468

Filename

821468