Title :
The Sensing Performance of Undoped-AlGaN/GaN/Sapphire HEMT Hydrogen Gas Sensor
Author :
Mohamad, Mazuina ; Meng, Fong Yee ; Hashim, Ahmad Mustafa
Author_Institution :
Mater. Innovations & Nanoeleectronics Res. Group, Univ. Teknol. Malaysia, Johor Bahru
Abstract :
The hydrogen sensing characteristics of undoped- AlGaN/GaN/sapphire circular Schottky diodes are systematically studied and compared over wide hydrogen concentration and temperature ranges. High purity hydrogen gas was exposed to the sample together with the ambient gas of either air or pure nitrogen or without ambient gas (vacuum) at pressure in the range of 50 Torr to 200 Torr was used for both types of ambient gases. The sensing characteristics at different hydrogen concentration are investigated. The sensitivity to hydrogen gas was also investigated in dependence of various catalytic metals thickness and operating temperatures.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; gas sensors; high electron mobility transistors; hydrogen; circular Schottky diodes; high purity hydrogen gas; hydrogen concentration; hydrogen gas sensor; sensing performance; undoped-AlGaN/GaN/sapphire HEMT; Aluminum gallium nitride; Gallium nitride; Gas detectors; Gases; HEMTs; Hydrogen; Nitrogen; Schottky diodes; Temperature distribution; Temperature sensors; catalytic metal; sensor; wide bandgap;
Conference_Titel :
Modeling & Simulation, 2008. AICMS 08. Second Asia International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-0-7695-3136-6
Electronic_ISBN :
978-0-7695-3136-6
DOI :
10.1109/AMS.2008.184
