Title :
Characterization of different IGBTs in ZVS commutation including parameter variation
Author :
Claudio, A. ; Aguayo, J. ; Cotorogea, M.
Author_Institution :
Centro Nacional de Investigacion y Desarrollo Tecnologico, Morelos, Mexico
fDate :
6/23/1905 12:00:00 AM
Abstract :
ZCS/ZVS techniques are used in order to increase frequency, reduce the weight and switching losses. Test circuits are commonly used for the characterization of devices. This work presents the characterization of IGBTs in ZVS conditions, considering parameter variations such as the current gradient, the gate voltage and the junction temperature
Keywords :
circuit testing; commutation; insulated gate bipolar transistors; power semiconductor switches; 1200 V; 600 V; IGBT; ZCS; ZVS; ZVS commutation; circuit design; current gradient; frequency increase; gate voltage; junction temperature; parameter variations; switching losses reduction; test circuit; weight reduction; zero-voltage-switching; Circuit synthesis; Circuit testing; Insulated gate bipolar transistors; Power semiconductor switches; RLC circuits; Resonance; Switching circuits; Switching loss; Temperature; Zero voltage switching;
Conference_Titel :
Power Electronics Specialists Conference, 2001. PESC. 2001 IEEE 32nd Annual
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-7067-8
DOI :
10.1109/PESC.2001.954181
