Title :
Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta2O5) thin film
Author :
Bahari, Noorfozila ; Zain, Azlina Mohd ; Abdullah, Ali Zaini ; Sheng, Daniel Bien Chia ; Othman, Masuri
Author_Institution :
Electr. Eng. Dept., Polytech. Sultan Haji Ahmad Shah, Kuantan, Malaysia
Abstract :
The pH-sensing properties of tantalum pentoxide (Ta2O5) film deposited by RF magnetron reactive sputtering method is demonstrated. The tantalum pentoxide film on silicon wafer samples were characterized by capacitance-voltage (C-V) measurements. The samples were annealed in ambient condition at 400°C for several hours. High frequency C-V measurements were performed on the wafer samples at pH levels of 4, 7 and 10. Results obtained from the C-V measurements showed good linearity in the selected pH range. The pH sensitivity has reached 62mV/pH, which is better than the theoretical Nernst potential.
Keywords :
ion sensitive field effect transistors; pH measurement; sensitivity; sputtering; tantalum compounds; thin films; C-V measurements; RF magnetron reactive sputtering method; ambient condition; capacitance-voltage measurements; pH sensitivity; pH-ISFET; silicon wafer; tantalum pentoxide thin film; temperature 400 degC; Annealing; Capacitance measurement; Capacitance-voltage characteristics; Frequency measurement; Magnetic properties; Performance evaluation; Radio frequency; Semiconductor films; Silicon; Sputtering; RF magnetron sputtering; Tantalum pentoxide; pH-ISFET; sensing membrane;
Conference_Titel :
Semiconductor Electronics (ICSE), 2010 IEEE International Conference on
Conference_Location :
Melaka
Print_ISBN :
978-1-4244-6608-5
DOI :
10.1109/SMELEC.2010.5549429
