Title :
Multicolour infrared detection with In0.1Ga0.9As/Al0.33Ga0.67As double and triple-coupled quantum well infrared photodetectors
Author :
Missous, Mohamed
fDate :
6/21/1905 12:00:00 AM
Abstract :
Two structures, designed to detect two and three infrared colours using coupled quantum wells in the are demonstrated. Both structures were initially grown without contacts on double-sided substrates to facilitate infrared absorption measurements. The `two-colour´ sample shows absorption at 7.4 μm and 9.1 μm, whereas the `three-colour´ sample shows absorption at 6.25 μm, 9.5 μm and 12.8 μm. To our knowledge this is the first time coupled quantum wells of the same composition have been used to detect multiple colours. Samples were then grown with contact layers to facilitate photoresponse measurements. Current-voltage and black body responsivity measurements are presented for these devices
Keywords :
III-V semiconductors; blackbody radiation; characteristics measurement; gallium arsenide; indium compounds; infrared detectors; semiconductor quantum wells; 12.8 mum; 6.25 mum; 7.4 mum; 9.1 mum; 9.5 mum; IR absorption measurements; In0.1Ga0.9As/Al0.33Ga0.67 As; InGaAs-AlGaAs; black body responsivity measurements; contact layers; current-voltage characteristics; double-coupled quantum well infrared photodetectors; double-sided substrates; multicolour infrared detection; multiple colours; triple-coupled quantum well infrared photodetectors; Contacts; Current measurement; Electromagnetic wave absorption; III-V semiconductor materials; Infrared detectors; Materials science and technology; Photodetectors; Process design; Radiation detectors; Voltage;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-5298-X
DOI :
10.1109/EDMO.1999.821471