DocumentCode :
1590076
Title :
Effect of Mn doping on the structural and optical properties of ZnO films
Author :
Rashid, A.R.A. ; Menon, P.S.
Author_Institution :
Inst. of Microengineering & Nanoelectron. (IMEN), Univ. Kebangsaan Malaysia, Bangi, Malaysia
fYear :
2010
Firstpage :
79
Lastpage :
82
Abstract :
Undoped and Mn doped ZnO films with different doping concentration were synthesized by sol gel method using a spin coating technique. Zn1-xMnxO thin films are prepared using 2-methoxyethanol solution of zinc acetate dehydrate and manganese acetate tetrahydrate. The solution was stabilized by MEA. The quantity of Mn in the sol was varied from x = 0, 0.02 and 0.04 with annealing temperature of 700°C. The samples were characterized using AFM to investigate the surface morphology and nanostructures. The XRD analysis shows the crystalline structure and orientation of the films. The films exhibit hexagonal wurtzite structure and improved crystalline quality by increasing the Mn doping. Meanwhile, the optical properties were characterized using UV-Vis where the transmittance and band gap decreases upon increment of Mn concentration.
Keywords :
II-VI semiconductors; X-ray diffraction; annealing; atomic force microscopy; crystal orientation; crystal structure; light transmission; manganese; optical constants; semiconductor doping; semiconductor growth; semiconductor thin films; sol-gel processing; spin coating; surface morphology; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; 2-methoxyethanol solution; AFM; UV-Vis; XRD; Zn1-xMnxO; annealing; band gap; crystalline orientation; crystalline structure; doping; hexagonal wurtzite structure; manganese acetate tetrahydrate; nanostructures; optical properties; sol gel method; spin coating; structural properties; surface morphology; temperature 700 degC; thin films; transmittance; zinc acetate dehydrate; Annealing; Coatings; Crystallization; Doping; Manganese; Optical films; Surface morphology; Temperature; Transistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics (ICSE), 2010 IEEE International Conference on
Conference_Location :
Melaka
Print_ISBN :
978-1-4244-6608-5
Type :
conf
DOI :
10.1109/SMELEC.2010.5549430
Filename :
5549430
Link To Document :
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