Title :
A 3-10 GHz SiGe resistive feedback low noise amplifier for UWB applications
Author :
Lee, Jongsoo ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
The analysis and design of an inductorless, resistive feedback low noise amplifier using advanced SiGe HBT technology, for application in UWB systems is presented. Measurements show 20 dB of gain with 1 dB variation over the 3 GHz to 10 GHz band, and a matched input and output with less than -10 dB of reflection. A minimum noise figure is 3.05 dB at 3 GHz and increases to 4.5 dB at 10 GHz. All these results are comparable to that of conventional LNAs with an emitter degenerated inductor, but this resistive feedback LNA has the advantage of die area over previous wideband LNAs due to the lack of a spiral inductor. Simple analytical design expressions are given for wideband LNA design and are verified using simulation and measurements. The measured input IP3 is -11.75 dBm with 17 mA total current consumption from 2.5 V supply.
Keywords :
Ge-Si alloys; MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; feedback amplifiers; integrated circuit design; network analysis; ultra wideband technology; 17 mA; 2.5 V; 20 dB; 3 to 10 GHz; 3.05 to 4.5 dB; HBT technology; SiGe; UWB applications; current consumption; emitter degenerated inductor; gain; inductorless amplifier; matched input; matched output; noise figure; reflection; resistive feedback low noise amplifier; silicon-germanium IC; Acoustic reflection; Feedback; Gain measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Inductors; Low-noise amplifiers; Silicon germanium; Wideband;
Conference_Titel :
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Print_ISBN :
0-7803-8983-2
DOI :
10.1109/RFIC.2005.1489871
