A 3-10 GHz SiGe resistive feedback low noise amplifier for UWB applications

Author

Lee, Jongsoo ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2005

Firstpage

545

Lastpage

548

Abstract

The analysis and design of an inductorless, resistive feedback low noise amplifier using advanced SiGe HBT technology, for application in UWB systems is presented. Measurements show 20 dB of gain with 1 dB variation over the 3 GHz to 10 GHz band, and a matched input and output with less than -10 dB of reflection. A minimum noise figure is 3.05 dB at 3 GHz and increases to 4.5 dB at 10 GHz. All these results are comparable to that of conventional LNAs with an emitter degenerated inductor, but this resistive feedback LNA has the advantage of die area over previous wideband LNAs due to the lack of a spiral inductor. Simple analytical design expressions are given for wideband LNA design and are verified using simulation and measurements. The measured input IP3 is -11.75 dBm with 17 mA total current consumption from 2.5 V supply.

Keywords

Ge-Si alloys; MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; feedback amplifiers; integrated circuit design; network analysis; ultra wideband technology; 17 mA; 2.5 V; 20 dB; 3 to 10 GHz; 3.05 to 4.5 dB; HBT technology; SiGe; UWB applications; current consumption; emitter degenerated inductor; gain; inductorless amplifier; matched input; matched output; noise figure; reflection; resistive feedback low noise amplifier; silicon-germanium IC; Acoustic reflection; Feedback; Gain measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Inductors; Low-noise amplifiers; Silicon germanium; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8983-2

Type

conf

DOI

10.1109/RFIC.2005.1489871

Filename

1489871