Title :
Modeling of broadband noise in complementary (npn + pnp) SiGe HBTs
Author :
Banerjee, Bhaskar ; Venkataraman, Sunitha ; Zhao, Enhai ; Lee, Chang-Ho ; Cressler, John D. ; Laskar, Joy ; El-Kareh, Badih ; Balster, Scott ; Yasuda, Hiroshi
Author_Institution :
Georgia Electron. Design Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We present the first comprehensive investigation of broadband noise in a complementary (npn + pnp) SiGe (C-SiGe) HBT BiCMOS technology. A base-transit time based simple noise model with its origins in linear noisy two-port theory is presented, which takes into account the fundamental base and collector shot noise in a bipolar transistor, and their cross-correlation. The minimum noise figure of the npn and the pnp SiGe HBT in this technology at 2.0 GHz is measured to be 1.0 dB and 1.4 dB, respectively. This noise model is compared with the conventional SPICE noise model and the measured differences in the noise behavior of the npn and pnp SiGe HBTs are analyzed.
Keywords :
BiCMOS integrated circuits; bipolar MMIC; heterojunction bipolar transistors; random noise; semiconductor device models; semiconductor device noise; 2 to 10 GHz; BiCMOS technology; base shot noise; base-transit time; bipolar transistor; broadband noise modeling; collector shot noise; complementary SiGe HBT; linear noisy two-port theory; silicon-germanium HBT; BiCMOS integrated circuits; Driver circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit noise; Integrated circuit technology; Isolation technology; Noise figure; Semiconductor device noise; Silicon germanium;
Conference_Titel :
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Print_ISBN :
0-7803-8983-2
DOI :
10.1109/RFIC.2005.1489873
