Modeling of broadband noise in complementary (npn + pnp) SiGe HBTs

Author

Banerjee, Bhaskar ; Venkataraman, Sunitha ; Zhao, Enhai ; Lee, Chang-Ho ; Cressler, John D. ; Laskar, Joy ; El-Kareh, Badih ; Balster, Scott ; Yasuda, Hiroshi

Author_Institution

Georgia Electron. Design Center, Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2005

Firstpage

553

Lastpage

556

Abstract

We present the first comprehensive investigation of broadband noise in a complementary (npn + pnp) SiGe (C-SiGe) HBT BiCMOS technology. A base-transit time based simple noise model with its origins in linear noisy two-port theory is presented, which takes into account the fundamental base and collector shot noise in a bipolar transistor, and their cross-correlation. The minimum noise figure of the npn and the pnp SiGe HBT in this technology at 2.0 GHz is measured to be 1.0 dB and 1.4 dB, respectively. This noise model is compared with the conventional SPICE noise model and the measured differences in the noise behavior of the npn and pnp SiGe HBTs are analyzed.

Keywords

BiCMOS integrated circuits; bipolar MMIC; heterojunction bipolar transistors; random noise; semiconductor device models; semiconductor device noise; 2 to 10 GHz; BiCMOS technology; base shot noise; base-transit time; bipolar transistor; broadband noise modeling; collector shot noise; complementary SiGe HBT; linear noisy two-port theory; silicon-germanium HBT; BiCMOS integrated circuits; Driver circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit noise; Integrated circuit technology; Isolation technology; Noise figure; Semiconductor device noise; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8983-2

Type

conf

DOI

10.1109/RFIC.2005.1489873

Filename

1489873