Title :
A compact low noise amplifier in SiGe:C BiCMOS technology for 40 GHz wireless communications
Author :
Pruvost, S. ; Telliez, I. ; Danneville, F. ; Chantre, A. ; Chevalier, P. ; Dambrine, G. ; Lepilliet, S.
Author_Institution :
FTM, STMicroelectronics, Crolles, France
Abstract :
This work demonstrates the feasibility of a low area, low consumption, low noise amplifier (LNA) for 40 GHz wireless communications in SiGe:C BiCMOS Technology. The two stage LNA was achieved using a simple approach due to the micro-strip line characteristics and exhibits a gain of 23 dB and 3.7 dB noise figure at 40 GHz for a total DC power consumption less than 20 mW. Linearity measurements provide an IIP1 of -12 dBm and an IIP3 better than 14 dBm. This allows a dynamic range of 62 dB and a third order free spurious dynamic range around 51 dB.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIMIC; MMIC amplifiers; carbon; doping profiles; integrated circuit design; integrated circuit measurement; integrated circuit noise; low-power electronics; microstrip lines; radio equipment; semiconductor materials; 20 mW; 23 dB; 3.7 dB; 40 GHz; DC power consumption; IIP1; IIP3; SiGe:C; SiGe:C BiCMOS technology; dynamic range; gain; linearity measurements; low area low consumption LNA; low noise amplifier; micro-strip line characteristics; millimeter-wave range; noise figure; third order free spurious dynamic range; two stage LNA; wireless communications; BiCMOS integrated circuits; Coplanar waveguides; Frequency measurement; Gain measurement; Low-noise amplifiers; MOSFETs; Millimeter wave technology; Millimeter wave transistors; Noise figure; Wireless communication;
Conference_Titel :
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Print_ISBN :
0-7803-8983-2
DOI :
10.1109/RFIC.2005.1489876
