Development of intense pulsed heavy ion beam accelerator using bipolar pulse for implantation to semiconductor

Intense pulsed heavy ion beams (PHIB) are expected to be applied to the implantation technology for semiconductor materials. In the application it is very important to purify the ion beam. To produce a pure PHIB a new type of pulsed power ion accelerator using bipolar pulse is proposed, which is called as "bipolar pulse accelerator". Gas puff plasma gun, a B/sub r/ type magnetically insulated acceleration gap and bipolar pulse generators has been developed to realize the bipolar pulse accelerator. In the experiment the gas puff plasma gun generates a nitrogen ion flux of current density around 200 A/cm/sup 2/. B/sub r/ magnetically insulated gap was tested with carbon plasma gun at acceleration potential of 100 kV and observed an ion beam of current density 2.5 A/cm/sup 2/. To generate bipolar pulses two types of PFL were proposed, the principle of the PFLs were confirmed theoretically and experimentally.