Integrated differential 2 GHz 2.7V low-noise active bandpass filters on silicon

Author

Sassi, Zoheir ; Darfeuille, Sébastien ; Barelaud, Bruno ; Billonnet, Laurent ; Jarry, Bernard ; Marie, Hervé ; Le, Nguyen Tran Luan ; Gamand, Patrice

Author_Institution

IRCOM, Limoges Univ., France

fYear

2005

Firstpage

569

Lastpage

572

Abstract

Silicon technology in CMOS and BiCMOS processes are now showing very interesting intrinsic characteristics. Two 2-GHz 2.7 V differential filter topologies are designed and analyzed in this paper. The first circuit is a filter based on an LC-Q enhanced topology, consuming less than 6.1 mA. It shows at the center frequency a 20-dB power transmission gain, a noise figure of 4.2 dB, a -35 dBm 1-dB input referred compression point and a -3 dB bandwidth of 50 MHz. The second circuit is a fourth-order bandpass filter developed and realized using four inductors electrically coupled with MOSFETs consuming 5.5 mA/pole. With a bandwidth of 43 MHz, a transmission gain of 34 dB and a noise figure of 4.4 dB at 2.05 GHz center frequency. Varactor diodes are used for frequency tuning. An amplifier is cascaded at the input for noise and impedance matching. Philips QUBIC4 Si BiCMOS technology is used (D. Szmyd et al., Proc. 2001 Bipolar/BiCMOS Circuits Tech. Meeting, pp. 60-63, 2001).

Keywords

BiCMOS integrated circuits; UHF filters; UHF integrated circuits; active filters; band-pass filters; integrated circuit design; integrated circuit noise; network topology; 2 GHz; 2.05 GHz; 2.7 V; 20 dB; 34 dB; 4.2 dB; 4.4 dB; 43 MHz; 5.5 mA; 50 MHz; 6.1 mA; BiCMOS processes; CMOS processes; LC-Q enhanced topology; MOSFET electrically coupled inductors; Philips QUBIC4 Si BiCMOS technology; Si; bandwidth; cascaded input amplifier; center frequency; differential filter topologies; filter design; fourth-order bandpass filter; frequency tuning; impedance matching; input referred compression point; integrated differential low-noise active bandpass filters; intrinsic characteristics; noise figure; noise matching; silicon technology; transmission gain; varactor diodes; Band pass filters; Bandwidth; BiCMOS integrated circuits; CMOS process; CMOS technology; Circuit topology; Frequency; Integrated circuit technology; Noise figure; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8983-2

Type

conf

DOI

10.1109/RFIC.2005.1489877

Filename

1489877