Title :
Electric field gradient dependence of excess avalanche noise
Author :
Tan, C.H. ; Plimmer, S.A. ; David, J.P.R. ; Rees, G.J. ; Tozer, R.C. ; Clark, J. ; Grey, R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
fDate :
6/21/1905 12:00:00 AM
Abstract :
Electron initiated avalanche noise measurements were performed on two Al0.3Ga0.7As pn+ diodes with p-region doping density Na=1.6×1017 cm-3 and Na=5.0×1017 cm-3 and two Al0.3Ga0.7As p+n structures with n-region doping density Nd=1.0×1017 cm-3 and Nd=4.6×1017 cm-3. The avalanche noise was found to decrease with increasing doping concentration in all structures and was found to be lower in the p+n structures than in the pn+ structures. The results are interpreted in terms of spatial coherence of the ionisation process
Keywords :
III-V semiconductors; aluminium compounds; avalanche diodes; gallium arsenide; semiconductor device noise; Al0.3Ga0.7As; avalanche noise; doping concentration; electric field gradient; p+n diode; pn+ diode; Avalanche photodiodes; Diodes; Doping; Electrons; Ionization; Neodymium; Noise measurement; Performance evaluation; Photoconductivity; Signal to noise ratio;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-5298-X
DOI :
10.1109/EDMO.1999.821490
