Title :
cdma2000 PCS/cell SiGe HBT load insensitive power amplifiers
Author :
Berretta, Giuseppe ; Cristaudo, Domenico ; Scaccianoce, Salvatore
Author_Institution :
STMicroelectron., Catania, Italy
Abstract :
A novel power amplifier design technique is proposed that uses load pull measurements in order to optimize linearity and efficiency. Two SiGe HBT MMIC power amplifiers suitable for cell and PCS applications have been realized in a 0.25 μm BiCMOS technology. Thanks to the design technique implemented, cdma2000-1X specifications can be met under output load mismatch up to 4:1 VSWR, thus allowing the removal of the external isolator in the transmitter chain.
Keywords :
3G mobile communication; BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC power amplifiers; UHF power amplifiers; bipolar transistor circuits; cellular radio; integrated circuit design; optimisation; personal communication networks; transceivers; 0.25 micron; 2 GHz; BiCMOS technology; MMIC power amplifiers; SiGe; VSWR; cdma2000 PCS applications; cdma2000 cellular applications; efficiency optimization; external isolator; linearity optimization; load insensitive power amplifiers; load pull measurements; silicon-germanium HBT; transceiver; transmitter chain; BiCMOS integrated circuits; Design optimization; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; MMICs; Personal communication networks; Power amplifiers; Power measurement; Silicon germanium;
Conference_Titel :
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Print_ISBN :
0-7803-8983-2
DOI :
10.1109/RFIC.2005.1489885
