DocumentCode :
1590858
Title :
Analytical thermal noise model suitable for circuit design using short-channel MOSFETs
Author :
Jeon, Jongwook ; Kim, Seyoung ; Kang, In Man ; Han, Kwangsuk ; Lee, Kwyro ; Shin, Hyungcheol
Author_Institution :
Seoul Nat. Univ., South Korea
fYear :
2005
Firstpage :
637
Lastpage :
640
Abstract :
The paper proposes a new analytical noise model for short-channel MOSFETs which covers both the linear and the saturation regions. Both the channel thermal noise model and the gate-induced model are presented. The analytical equations for the noise parameters are also derived. Modeling results show an excellent agreement with measured noise parameter data.
Keywords :
MOSFET; integrated circuit design; semiconductor device models; semiconductor device noise; thermal noise; CMOS devices; analytical thermal noise model; channel thermal noise model; circuit design; gate-induced model; linear region; saturation region; short-channel MOSFET; Analytical models; Circuit noise; Circuit synthesis; Integral equations; Integrated circuit noise; MOSFETs; Noise figure; Noise measurement; Semiconductor device modeling; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
ISSN :
1529-2517
Print_ISBN :
0-7803-8983-2
Type :
conf
DOI :
10.1109/RFIC.2005.1489894
Filename :
1489894
Link To Document :
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