Fabrication of high piezoelectric PZT-based thin films by sputtering method

The ternary compound films with excellent Piezoelectricity, 0.06Pb(Mn1/3,Nb2/3)O3-0.47PbZrO3-0.47PbTiO3(0.06PMnN-0.94PZT(50/50)), are fabricated and characterized on the silicon substrates for the actuators, sensors and MEMS applications, and the high sensitive micro-cantilevers made of these films on silicon substrates are fabricated and characterized. The results show that the 0.06PMnN-0.94PZT(50/50) films own polycrystal phase with (111), (101) and (001) orientations combined, and the films own the high transverse piezoelectricity of e31,f=14.9 C/m², moreover, the cantilevers with unimorph 0.06PMnN-0.94PZT(50/50) films on the Si beams exhibit excellent behaviors with high sensitivity, which are expected to be used in the micro-actuators, micro-sensors and MEMS, such as scan electronic microscope, biological and physical sensors, electronic switches and so on, which also shows special merits for the integrated system and less pollution on the environment.