Title :
Effect of Ar/O2 gas ratio and annealing temperature on the structure and properties of ZnO film
Author :
Yinghui, Chen ; Yang, Gao ; Shiwei, Xi ; Xinghai, Zhao ; Juan, Liu
Author_Institution :
Inst. of Electron. Eng., China Acad. of Eng. Phys., Mianyang, China
Abstract :
Zinc oxide (ZnO) film is deposited on Si (001) substrate by radio-frequency (RF) reactive magnetron sputtering method. Then the samples are annealed at different temperatures. The effects of the ratio of Ar/O2 and annealing temperature are investigated. Crystal structures of the films are characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results indicate that the ratio of Ar/O2 and the annealing temperature have great influence on the crystal orientation and the surface morphology. The crystalline orientation of ZnO thin film is in direct proportion to the Ar/O2 gas ratio. While less than 750°C;, the crystal orientation of ZnO thin film increases with the annealing temperature increasing. As higher than 750°C, the crystalline orientation of ZnO thin film is inversely proportional to the annealing temperature.
Keywords :
II-VI semiconductors; X-ray diffraction; annealing; atomic force microscopy; crystal orientation; semiconductor growth; semiconductor thin films; sputter deposition; surface morphology; wide band gap semiconductors; zinc compounds; AFM; Si; Si (001) substrate; X-ray diffraction; XRD; ZnO; annealing; atomic force microscopy; crystal orientation; crystal structures; gas ratio; radio-frequency reactive magnetron sputtering; surface morphology; zinc oxide thin film; Annealing; Argon; Crystals; Films; Sputtering; Substrates; Zinc oxide; RF reactive magnetron sputtering; ZnO film; annealing temperature; c-axis orientation; piezoelectric film; the ratio of Ar/O2;
Conference_Titel :
Electronic Measurement & Instruments (ICEMI), 2011 10th International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-8158-3
DOI :
10.1109/ICEMI.2011.6037946
