Genetic algorithm based extraction method for distributed small-signal model of GaN HEMTs

Author

Jarnda, Anwar

Author_Institution

Comput. Eng. Dept., Hodeidah Univ., Hodeidah, Yemen

fYear

2010

Firstpage

41

Lastpage

44

Abstract

In this paper, an improved small-signal model parameter extraction method, using genetic algorithm (GA), is presented and implemented for GaN HEMT. The GA optimization is used to generate a high quality reliable starting values for the elements of distributed model. This value are then refined using local optimization technique to find optimal value for each model element. The developed extraction method is validated by simulating S-parameter measurements of a 8×125-μm gate width GaN HEMT over a wide bias range.

Keywords

S-parameters; gallium compounds; genetic algorithms; high electron mobility transistors; semiconductor device models; GA optimization; S-parameter measurements; distributed small-signal model; gallium nitride HEMT; genetic algorithm; small-signal model parameter extraction method; Capacitance; Electrical resistance measurement; Frequency measurement; Gallium nitride; Genetic algorithms; HEMTs; MODFETs; Optimization methods; Parameter extraction; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics (ICSE), 2010 IEEE International Conference on

Conference_Location

Melaka

Print_ISBN

978-1-4244-6608-5

Type

conf

DOI

10.1109/SMELEC.2010.5549476

Filename

5549476