Laterally grown porous polycrystalline silicon: a new material for transducer applications

Author

Anderson, R.C. ; Muller, R.S. ; Tobias, C.W.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1991

Firstpage

747

Lastpage

750

Abstract

The formation of porous polycrystalline silicon with pore growth constrained in a thin film has been demonstrated. The overlying silicon nitride layer is optically transparent and allows direct observation of the evolving pore structure. The porous microstructure was characterized using transmission electron microscopy. In addition to measuring growth rates, the authors have explored the transition to the condition of uniform attack and have exploited this effect to form novel structures.<>

Keywords

anodisation; elemental semiconductors; etching; porous materials; semiconductor thin films; silicon; transducers; transmission electron microscope examination of materials; LPCVD; Si; Si-Si/sub x/N/sub y/; anodisation; condition of uniform attack; electrochemical etching; elemental semiconductor; growth rates; laterally grown; pore growth; porous polycrystalline Si; thin film; transducer application; transmission electron microscopy; Application software; Current density; Dielectric substrates; Electrodes; Etching; Hydrogen; Optical sensors; Silicon on insulator technology; Thermal sensors; Transducers;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-87942-585-7

Type

conf

DOI

10.1109/SENSOR.1991.148991

Filename

148991