Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
Summary form only given. The authors have investigated secondary ion mass spectrometry (SIMS) relative sensitivity factors, detection limits, and interferences for the detection and determination of the densities of various impurities in SOI wafers (H, C, N O, Na, Al, K, Ti Ti, Cr, Mn Fe, and Cu) using both oxygen and Cs SIMS, with both positive and negative spectrometry. They have used implantation studies of rare isotopes as well as common isotopes and high mass resolution SIMS to sort out interference issues and to determine detection limits. Ion yields and relative sputtering rates were determined in the Si and SIO 2 SOI layers. More than 60 SOI structures, including devices, from various sources and annealed at various temperatures have been examined. The gettering action of C, P, and Ge ion implantation into SIMOX wafers, subsequently annealed at 1300 or 1350°C), has also been studied. Significant redistribution (gettering) of Cu into the implanted region has been observed
Keywords :
carbon; elemental semiconductors; germanium; getters; ion implantation; phosphorus; secondary ion mass spectroscopy; semiconductor technology; semiconductor-insulator boundaries; silicon; 1300 to 1350 C; Al; C; Cr; Cs; Cu; Fe; Ge; H; K; Mn; N; Na; O; P; SIMOX wafers; SIMS; SOI structures; SOI wafers; Si-SiO2-Si; Ti; annealing temperatures; common isotopes; detection limits; high mass resolution SIMS; implantation studies of rare isotopes; implantation-induced gettering; interferences; ion implantation; negative spectrometry; reduction of impurities; relative sensitivity factors; relative sputtering rates; secondary ion mass spectrometry; semiconductors; Annealing; Chromium; Gettering; Impurities; Interference; Iron; Isotopes; Mass spectroscopy; Sputtering; Temperature;
