Large-signal modeling of AlGaN/GaN HEMTs based on DC IV and S-parameter measurements

Author

Jarndal, Anwar ; Aflaki, Pouya ; Ghannouchi, Fadhel M.

Author_Institution

Comput. Eng. Dept, Hodeidah Univ., Hodeidah, Yemen

fYear

2010

Firstpage

34

Lastpage

37

Abstract

In this paper, a large-signal model for GaN HEMT transistors for designing RF power amplifiers is presented. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The modeling procedure is applied to a 4-W packaged GaN-on-Si HEMT and the developed model is validated by comparing its large-signal simulation to measured data under different classes of operation.

Keywords

III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; power amplifiers; radiofrequency amplifiers; semiconductor device models; AlGaN-GaN; DC IV measurement; GaN HEMT transistor; GaN-on-Si HEMT; RF power amplifier; S-parameter measurement; large-signal modeling; Aluminum gallium nitride; Design automation; Gallium nitride; HEMTs; MODFETs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Scattering parameters; Software measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics (ICSE), 2010 IEEE International Conference on

Conference_Location

Melaka

Print_ISBN

978-1-4244-6608-5

Type

conf

DOI

10.1109/SMELEC.2010.5549480

Filename

5549480