Title :
Large-signal modeling of AlGaN/GaN HEMTs based on DC IV and S-parameter measurements
Author :
Jarndal, Anwar ; Aflaki, Pouya ; Ghannouchi, Fadhel M.
Author_Institution :
Comput. Eng. Dept, Hodeidah Univ., Hodeidah, Yemen
Abstract :
In this paper, a large-signal model for GaN HEMT transistors for designing RF power amplifiers is presented. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The modeling procedure is applied to a 4-W packaged GaN-on-Si HEMT and the developed model is validated by comparing its large-signal simulation to measured data under different classes of operation.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; power amplifiers; radiofrequency amplifiers; semiconductor device models; AlGaN-GaN; DC IV measurement; GaN HEMT transistor; GaN-on-Si HEMT; RF power amplifier; S-parameter measurement; large-signal modeling; Aluminum gallium nitride; Design automation; Gallium nitride; HEMTs; MODFETs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Scattering parameters; Software measurement;
Conference_Titel :
Semiconductor Electronics (ICSE), 2010 IEEE International Conference on
Conference_Location :
Melaka
Print_ISBN :
978-1-4244-6608-5
DOI :
10.1109/SMELEC.2010.5549480
