Title :
Photophysical properties of thin films containing metal and 8-hydroxyquinoline complexes
Author :
Zawadzka, A. ; Plociennik, P. ; Strzelecki, J. ; Korcala, A. ; Sahraoui, B.
Author_Institution :
Inst. of PhysicsPhysics, Nicolaus Copernicus Univ., Torun, Poland
Abstract :
This work contains investigation results of the structural and optical properties of the thin films containing metal (M = Zn, Cu and Al) and bis- or tris(8-hydroxyquinoline). The films were successfully grown by physical vapor deposition (PVD) technique in high vacuum on transparent (quartz) and semiconductor (n-type silicon) substrates kept at room temperature during the deposition process. Selected films were annealed after fabrication in ambient atmosphere for 24 hours at the temperature equal to 50 °C, 100 °C and 150 °C. Spectral properties of these films were examined using transmission, photoluminescence, SGH and THG technique. The experimental spectra were allowed to determine optical constant of the films. Structural properties were investigated by optical images and AFM measurements. The Mqn (n = 2 or 3) films exhibit high structural quality regardless of the annealing process, but the stability of the film can be improved by using an appropriate temperature during the annealing process. We find that the optical properties were strictly connected with the morphology and the annealing process can significantly change the structural properties of the films.
Keywords :
aluminium compounds; annealing; atomic force microscopy; copper compounds; infrared spectra; optical constants; optical harmonic generation; organometallic compounds; photoluminescence; thin films; ultraviolet spectra; vacuum deposition; visible spectra; zinc compounds; AFM measurement; PVD technique; SGH technique; Si; SiO2; THG technique; ambient atmosphere; high structural quality; hydroxyquinoline complex; metal complex; morphology; n-type silicon substrate; optical image; photoluminescence technique; physical vapor deposition technique; quartz substrate; second harmonic generation; semiconductor substrate; temperature 293 K to 298 K; temperature 50 degC to 150 degC; thin film annealing; thin film fabrication; thin film photophysical properties; thin film stability; third harmonic generation; time 24 hour; transmission technique; transparent substrate; Annealing; Integrated optics; Nonlinear optics; Optical films; Optical harmonic generation; Temperature measurement; PVD (physical vapor deposition); SHG (second harmonic generation); THG (third harmonic generation); metal bis- or tris-(8-hydroxyquinoline); photoluminescence;
Conference_Titel :
Transparent Optical Networks (ICTON), 2015 17th International Conference on
Conference_Location :
Budapest
DOI :
10.1109/ICTON.2015.7193543