Title :
Through-wafer electrical interconnects by sidewall photolithographic patterning
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
This paper describes a new photolithography technique for patterning vertical surfaces using 45-degree reflective mirrors. The resolution is limited by diffraction and by surface scattering. Using this techniques, novel through-wafer interconnects have been demonstrated with high wiring density. At 320 nm wavelength, 50 μm-wide vertical lines have been fabricated with 25 μm line-width loss
Keywords :
integrated circuit interconnections; microsensors; mirrors; photolithography; stress measurement; 320 nm; 50 mum; diffraction; high wiring density; reflective mirrors; shear stress sensor; sidewall photolithographic patterning; surface scattering; through-wafer interconnects; vertical lines; vertical surfaces; Light scattering; Lithography; Mirrors; Optical scattering; Optical surface waves; Resists; Rough surfaces; Silicon; Surface fitting; Surface roughness;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 1998. IMTC/98. Conference Proceedings. IEEE
Conference_Location :
St. Paul, MN
Print_ISBN :
0-7803-4797-8
DOI :
10.1109/IMTC.1998.676984
