DocumentCode
1591786
Title
Electrical properties of sputtered deposited tungsten silicide films
Author
Hoon, Jian-Wei ; Chan, Kah-Yoong ; Krishnasamy, Jegenathan ; Kamaruddin, Sharul Ashikin Binti ; Wong, Hin-Yong ; Tou, Teck-Yong
Author_Institution
Fac. of Eng., Multimedia Univ., Cyberjaya, Malaysia
fYear
2010
Firstpage
5
Lastpage
7
Abstract
This paper addresses the effect of substrate temperature and deposition pressure on the electrical properties of Direct Current (DC) plasma magnetron sputter-deposited Tungsten Silicide (WSi) films on silicon substrates. Results from experiments show that, substrate temperature and deposition pressure has exerted significant influence on the electrical properties of the WSi films. The electrical properties of the WSi films are inferior at high deposition pressure and high substrate temperature.
Keywords
electric properties; plasma materials processing; sputter deposition; substrates; tungsten compounds; WSi; direct current plasma magnetron sputter-deposition; electrical properties; silicon substrates; substrate temperature; tungsten silicide films; Argon; Conductivity; Magnetic properties; Plasma properties; Plasma temperature; Semiconductor films; Silicides; Sputtering; Substrates; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics (ICSE), 2010 IEEE International Conference on
Conference_Location
Melaka
Print_ISBN
978-1-4244-6608-5
Type
conf
DOI
10.1109/SMELEC.2010.5549498
Filename
5549498
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