DocumentCode :
1591786
Title :
Electrical properties of sputtered deposited tungsten silicide films
Author :
Hoon, Jian-Wei ; Chan, Kah-Yoong ; Krishnasamy, Jegenathan ; Kamaruddin, Sharul Ashikin Binti ; Wong, Hin-Yong ; Tou, Teck-Yong
Author_Institution :
Fac. of Eng., Multimedia Univ., Cyberjaya, Malaysia
fYear :
2010
Firstpage :
5
Lastpage :
7
Abstract :
This paper addresses the effect of substrate temperature and deposition pressure on the electrical properties of Direct Current (DC) plasma magnetron sputter-deposited Tungsten Silicide (WSi) films on silicon substrates. Results from experiments show that, substrate temperature and deposition pressure has exerted significant influence on the electrical properties of the WSi films. The electrical properties of the WSi films are inferior at high deposition pressure and high substrate temperature.
Keywords :
electric properties; plasma materials processing; sputter deposition; substrates; tungsten compounds; WSi; direct current plasma magnetron sputter-deposition; electrical properties; silicon substrates; substrate temperature; tungsten silicide films; Argon; Conductivity; Magnetic properties; Plasma properties; Plasma temperature; Semiconductor films; Silicides; Sputtering; Substrates; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics (ICSE), 2010 IEEE International Conference on
Conference_Location :
Melaka
Print_ISBN :
978-1-4244-6608-5
Type :
conf
DOI :
10.1109/SMELEC.2010.5549498
Filename :
5549498
Link To Document :
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