• DocumentCode
    1592309
  • Title

    SIMOX and VLSI high speed and rad hard applications: discussion of floating body effects and circuits optimization

  • Author

    Auberton, A.J.

  • Author_Institution
    CEA-IRDI-D LETI, CENG, Grenoble, France
  • fYear
    1988
  • Firstpage
    55
  • Abstract
    Some results obtained in a CMOS prototype line environment are reported to show the compatibility of SIMOX (separation by implantation of oxygen) technology with industrial applications. The main parameters of devices and circuits optimization are analyzed in terms of VLSI applications. New floating-body effects and solutions to improve the SOI performances are discussed. High-speed and radiation-hard technologies are examined
  • Keywords
    CMOS integrated circuits; VLSI; integrated circuit technology; ion implantation; radiation hardening (electronics); semiconductor-insulator boundaries; CMOS; SIMOX CMOS technology; SOI performances; Si-SiO2-Si; VLSI high speed; circuits optimization; compatibility of SIMOX; floating body effects; industrial applications; prototype line environment; rad hard applications; radiation-hard technologies; separation by implantation of oxygen; Circuits; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOS/SOI Technology Workshop, 1988. Proceedings., 1988 IEEE
  • Conference_Location
    St. Simons Island, GA
  • Type

    conf

  • DOI
    10.1109/SOI.1988.95427
  • Filename
    95427
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1592309