DocumentCode
159249
Title
Quantum dot lasers on silicon
Author
Liu, Alan Y. ; Chong Zhang ; Gossard, Arthur C. ; Bowers, John E.
Author_Institution
Mater. Dept., UCSB, Santa Barbara, CA, USA
fYear
2014
fDate
27-29 Aug. 2014
Firstpage
205
Lastpage
206
Abstract
We describe recent developments on 1.3 μm InAs/GaAs quantum dot lasers epitaxially grown on silicon by molecular beam epitaxy. Record high output powers, lasing temperatures, and operating lifetimes among GaAs based lasers epitaxially grown on silicon have been achieved.
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical fabrication; quantum dot lasers; silicon; InAs-GaAs; Si; lasing temperatures; molecular beam epitaxy; operating lifetimes; output powers; quantum dot lasers; silicon; wavelength 1.3 mum; Gallium arsenide; Power generation; Quantum dot lasers; Silicon; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location
Paris
Print_ISBN
978-1-4799-2282-6
Type
conf
DOI
10.1109/Group4.2014.6961926
Filename
6961926
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