Title :
2008 International Symposium on VLSI Technology, Systems and Applications Organization
Abstract :
The following topics were dealt with: low power ICs; interconnect technology; charge trapping; nano crystal non-volatile memories; molecular nanoelectronics; post-CMOS devices; high voltage devices; strained silicon; high-k dielectrics; MOSFET characterization and modeling.
Keywords :
CMOS integrated circuits; MOSFET; VLSI; high-k dielectric thin films; integrated circuit interconnections; low-power electronics; molecular electronics; nanoelectronics; semiconductor device models; silicon-on-insulator; MOSFET characterization; MOSFET modeling; VLSI; charge trapping; high voltage devices; high-k dielectrics; interconnect technology; low power IC; molecular nanoelectronics; nanocrystal nonvolatile memories; post-CMOS devices; strained silicon;
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1614-1
DOI :
10.1109/VTSA.2008.4530770
