Title :
Future memory technology: challenges and opportunities
Author_Institution :
Memory Bus., Samsung Electron. Co., Ltd., Hwasung
Abstract :
Future memory technologies are assessed in views of challenges and opportunities. The challenges which future memory confronts with are not just from technical challenges, but from techno-economical issues which become much critical. In this study, two most important memories: DRAM and NAND flash will be discussed in respects of challenges and opportunities and PRAM will be discussed as one of the important new emerging non-volatile random access memories (RAM).
Keywords :
DRAM chips; NAND circuits; flash memories; random-access storage; DRAM; NAND flash; PRAM; future memory technology; nonvolatile random access memories; techno economical issues; Capacitance; Doping; Energy consumption; High K dielectric materials; High-K gate dielectrics; Leakage current; MIM capacitors; Material storage; Random access memory; Transistors;
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1614-1
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2008.4530774
