• DocumentCode
    159269
  • Title

    Carrier lifetimes in uniaxially strained Ge micro bridges

  • Author

    Geiger, Richard ; Suess, M.J. ; Bonzon, C. ; Frigerio, Jacopo ; Chrastina, D. ; Isella, Giovanni ; Spolenak, R. ; Faist, J. ; Sigg, Hans

  • Author_Institution
    Lab. for Micro- & Nanotechnol, Paul Scherrer Inst., Villigen, Switzerland
  • fYear
    2014
  • fDate
    27-29 Aug. 2014
  • Firstpage
    227
  • Lastpage
    228
  • Abstract
    The performance of strained Ge bridges is compared with unprocessed layers in terms of their non-radiative recombination time. Despite strain and additionally introduced free surfaces, the lifetime for the strained microstructures does not decrease.
  • Keywords
    CMOS integrated circuits; carrier lifetime; elemental semiconductors; germanium; integrated optics; micro-optics; optical interconnections; CMOS chips; Ge; carrier lifetimes; nonradiative recombination time; optical interconnects; strained microstructures; uniaxially strained Ge microbridges; Bridge circuits; Bridges; Optical waveguides; Radiative recombination; Silicon; Strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4799-2282-6
  • Type

    conf

  • DOI
    10.1109/Group4.2014.6961937
  • Filename
    6961937
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=159269