DocumentCode :
159274
Title :
Resonant light emission from N-doped germanium-on-insulator microdisks at room-temperature
Author :
Xuejun Xu ; Sawano, Kentarou ; Maruizumi, Takuya ; Shiraki, Yasuhiro
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo City Univ., Tokyo, Japan
fYear :
2014
fDate :
27-29 Aug. 2014
Firstpage :
231
Lastpage :
232
Abstract :
Tensile-strained, n-doped germanium-on-insulator (GOI) substrates with doping concentration up to 1.0×1020 cm-3 are fabricated by wafer bonding and spin-on-dopant. Resonant photoluminescence peaks corresponding to whispering gallery modes are obtained from microdisks fabricated on GOI at room-temperature.
Keywords :
doping profiles; elemental semiconductors; germanium; micro-optics; microfabrication; optical fabrication; photoluminescence; semiconductor-insulator boundaries; wafer bonding; whispering gallery modes; GOI substrates; Ge; doping concentration; n-doped germanium-on-insulator microdisks; resonant light emission; resonant photoluminescence; spin-on-dopant; temperature 293 K to 298 K; tensile-strained n-doped germanium-on-insulator GOI substrates; wafer bonding; whispering gallery modes; Doping; Optical device fabrication; Optical pumping; Pump lasers; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
Type :
conf
DOI :
10.1109/Group4.2014.6961939
Filename :
6961939
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=159274
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