• DocumentCode
    159274
  • Title

    Resonant light emission from N-doped germanium-on-insulator microdisks at room-temperature

  • Author

    Xuejun Xu ; Sawano, Kentarou ; Maruizumi, Takuya ; Shiraki, Yasuhiro

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Tokyo City Univ., Tokyo, Japan
  • fYear
    2014
  • fDate
    27-29 Aug. 2014
  • Firstpage
    231
  • Lastpage
    232
  • Abstract
    Tensile-strained, n-doped germanium-on-insulator (GOI) substrates with doping concentration up to 1.0×1020 cm-3 are fabricated by wafer bonding and spin-on-dopant. Resonant photoluminescence peaks corresponding to whispering gallery modes are obtained from microdisks fabricated on GOI at room-temperature.
  • Keywords
    doping profiles; elemental semiconductors; germanium; micro-optics; microfabrication; optical fabrication; photoluminescence; semiconductor-insulator boundaries; wafer bonding; whispering gallery modes; GOI substrates; Ge; doping concentration; n-doped germanium-on-insulator microdisks; resonant light emission; resonant photoluminescence; spin-on-dopant; temperature 293 K to 298 K; tensile-strained n-doped germanium-on-insulator GOI substrates; wafer bonding; whispering gallery modes; Doping; Optical device fabrication; Optical pumping; Pump lasers; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4799-2282-6
  • Type

    conf

  • DOI
    10.1109/Group4.2014.6961939
  • Filename
    6961939
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=159274