Title :
Variable-Threshold-Voltage FinFETs with a Control-Voltage Range within the Logic-Level Swing Using Asymmetric Work-Function Double Gates
Author :
Uchi, S.O. ; Sakamoto, K. ; Endo, K. ; Masahara, M. ; Matsukawa, T. ; Liu, Y.X. ; Hioki, M. ; Nakagawa, T. ; Sekigawa, T. ; Koike, H. ; Suzuki, E.
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
Abstract :
This paper presents the VG1-VG2 map to identify the state of channels and clarified the performance of 4T-FinFETs as a VT-FET. As a result, we found that the asymmetric work-function DG structure achieves Vth controllability without the S-slope degradation within the Vth-control-voltage range VSS les VG2 les VDD. This control voltage range is a great advantage to simplify the system organization for the power management, which is never realized by the planar bulk devices.
Keywords :
MOSFET; work function; asymmetric double gates; four-terminal finFET; logic-level swing; variable threshold voltage; work function; Circuit noise; Degradation; Energy management; FETs; FinFETs; Logic circuits; Nanoelectronics; Threshold voltage; Variable structure systems; Voltage control;
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1614-1
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2008.4530778
