Title :
Process induced tensile strain of Ge on Si nanopillars by ICP-PECVD SiN stressor layers
Author :
Millar, R.W. ; Gallacher, Kevin ; Samarelli, Antonio ; Dumas, D.C.S. ; Frigerio, Jacopo ; Chrastina, D. ; Isella, Giovanni ; Paul, Douglas J.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
Silicon nitride stressor layers deposited by inductively coupled plasma-enhanced-chemical-vapor-deposition were used to increase the emission wavelength of germanium nanopillars. These stressors contain less hydrogen than silicon nitride deposited by other techniques, and therefore should provide lower optical loss in strained devices operating near telecoms wavelengths, or in the mid-infrared.
Keywords :
germanium; optical fabrication; optical films; optical losses; optical materials; piezo-optical effects; plasma CVD; silicon compounds; tensile strength; Ge on Si nanopillars; Ge-Si; ICP-PECVD SiN stressor layers; SiN; emission wavelength; germanium nanopillars; inductively coupled plasma-enhanced-chemical-vapor-deposition; mid-infrared wavelengths; optical loss; process induced tensile strain; silicon nitride stressor layers; strained devices; telecom wavelengths; Integrated optics; Optical films; Optical pumping; Silicon compounds; Strain; Stress;
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
DOI :
10.1109/Group4.2014.6961941
