Process induced tensile strain of Ge on Si nanopillars by ICP-PECVD SiN stressor layers

Author

Millar, R.W. ; Gallacher, Kevin ; Samarelli, Antonio ; Dumas, D.C.S. ; Frigerio, Jacopo ; Chrastina, D. ; Isella, Giovanni ; Paul, Douglas J.

Author_Institution

Sch. of Eng., Univ. of Glasgow, Glasgow, UK

fYear

2014

fDate

27-29 Aug. 2014

Firstpage

235

Lastpage

236

Abstract

Silicon nitride stressor layers deposited by inductively coupled plasma-enhanced-chemical-vapor-deposition were used to increase the emission wavelength of germanium nanopillars. These stressors contain less hydrogen than silicon nitride deposited by other techniques, and therefore should provide lower optical loss in strained devices operating near telecoms wavelengths, or in the mid-infrared.

Keywords

germanium; optical fabrication; optical films; optical losses; optical materials; piezo-optical effects; plasma CVD; silicon compounds; tensile strength; Ge on Si nanopillars; Ge-Si; ICP-PECVD SiN stressor layers; SiN; emission wavelength; germanium nanopillars; inductively coupled plasma-enhanced-chemical-vapor-deposition; mid-infrared wavelengths; optical loss; process induced tensile strain; silicon nitride stressor layers; strained devices; telecom wavelengths; Integrated optics; Optical films; Optical pumping; Silicon compounds; Strain; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics (GFP), 2014 IEEE 11th International Conference on

Conference_Location

Paris

Print_ISBN

978-1-4799-2282-6

Type

conf

DOI

10.1109/Group4.2014.6961941

Filename

6961941