Title :
Ge/SiGe quantum confined Stark effect modulators with low voltage swing at λ= 1550 nm
Author :
Dumas, D.C.S. ; Gallacher, Kevin ; Rhead, S. ; Myronov, M. ; Leadley, D.R. ; Paul, Douglas J.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulators covering 1460 to 1560 nm wavelength have been demonstrated using Ge/SiGe quantum confined Stark effect diodes grown on a silicon substrate.
Keywords :
Ge-Si alloys; electro-optical modulation; elemental semiconductors; germanium; integrated optics; integrated optoelectronics; p-i-n diodes; quantum confined Stark effect; silicon; Ge-SiGe; Ge-SiGe quantum confined Stark effect modulators; Si; electro-absorption modulators; high-contrast ratio; low voltage swing; quantum confined Stark effect diodes; wavelength 1460 nm to 1560 nm; Absorption; Current measurement; Modulation; Photoconductivity; Quantum well devices; Silicon germanium; Wavelength measurement;
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
DOI :
10.1109/Group4.2014.6961946
