DocumentCode
159292
Title
Low-voltage Ge avalanche photodetector for highly sensitive 10Gb/s Si photonics receivers
Author
Chen, Huan Ting ; Verheyen, P. ; Rakowski, M. ; De Heyn, P. ; Lepage, G. ; De Coster, J. ; Absil, P. ; Roelkens, Gunther ; Van Campenhout, J.
Author_Institution
IMEC, Leuven, Belgium
fYear
2014
fDate
27-29 Aug. 2014
Firstpage
106
Lastpage
107
Abstract
We demonstrate low-voltage germanium waveguide avalanche photodetectors (APD) with gain-bandwidth product of 88GHz. A 7.1dB sensitivity improvement is demonstrated for an APD wire-bonded to a 10Gb/s CMOS transimpedance amplifier, at -6.2V APD bias.
Keywords
elemental semiconductors; germanium; integrated optoelectronics; lead bonding; operational amplifiers; optical receivers; optical waveguides; photodetectors; silicon; APD bias; APD wire-bonding; CMOS transimpedance amplifier; Ge-Si; bandwidth 88 GHz; bit rate 10 Gbit/s; gain-bandwidth product; highly sensitive photonics receivers; low-voltage germanium waveguide avalanche photodetectors; voltage -6.2 V; Bandwidth; Optical receivers; Optical sensors; Optical waveguides; Sensitivity; Silicon; Avalanche photodetector; Optical interconnects; Silicon photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location
Paris
Print_ISBN
978-1-4799-2282-6
Type
conf
DOI
10.1109/Group4.2014.6961949
Filename
6961949
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