Characterization of IGBTs for high-speed switches for laser applications

For compact pulsed power systems, e.g. a nitrogen gas laser, the current and voltage slopes in the load are of great importance. A significant problem is that the specified switching speed of commercially available devices like IGBT or MOSFET is too low and magnetic pulse compression networks are not desirable due to the compactness and jitter required. Special pulsed power switching devices, such as MCT (MOS Controlled Thyristor), MTO, and Thyratrons have limitations in reliability, life time and/or price.